Faculty Directory
Abbas Haddadi

Research Assistant Professor

Contact

2220 Campus Drive
Cook Hall 4051
Evanston, IL 60208-3109

Email Abbas Haddadi

Website

Abbas LinkedIn Page

Center for Quantum Devices


Departments

Electrical Engineering and Computer Science

Education

PhD (with highest honors) in Electrical Engineering and Computer Science, Northwestern University, Evanston, IL

MSc in Electrical Engineering and Computer Science, Northwestern University, Evanston, IL

BSc in Electrical and Computer Engineering, University of Tehran, Tehran, Iran


Research Interests

Compound Semiconductor Materials and Device Technology, Epitaxial Crystal Growth (Molecular Beam Epitaxy (MBE)), Novel Optoelectronic Devices and Systems, High-speed Optoelectronics, Novel Infrared Photon Detectors and Imagers.


Selected Publications

    Y. Zhang, A. Haddadi, R. Chevallier, A. Dehzangi, and M. Razeghi, "Thin-film Antimonide-based Photodetectors Integrated on Si," IEEE Journal of Quantum Electronics (JQE), Vol. 54, No. 2, pp. 1-7, April 2018.

    A. Dehzngi, A. Haddadi, R. Chevallier, Y. Zhang, and M. Razeghi, "nBn extended short–wavelength infrared focal plane array," Optics Letters, Vol. 43, Issue 3, pp. 591-594 (2018).

    A. Haddadi, and M. Razeghi, "Bias–selectable three–color short–/extended short–/mid–wavelength infrared photodetectors based on type–II InAs/GaSb/AlSb superlattices," Optics Letters, Vol. 42, Issue 21, pp. 4275-4278 (2017).

    R. Chevallier, A. Dehzangi, A. Haddadi, and M. Razeghi, "Type–II superlattice–based extended short–wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch–stop layer to allow near–visible light detection," Optics Letters, Vol. 42, Issue 21, pp. 4299-4302 (2017).

    R. Chevallier, A. Haddadi, and M. Razeghi, "Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors," Scientific Reports 7, Article number: 12617 (2017).

    R. Chevallier, A. Haddadi, and M. Razeghi, "Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices," Solid-State Electronics, Vol. 136, pp. 51-54, October 2017.

    A. Haddadi, A. Dehzangi, R. Chevallier, S. Adhikary, and M. Razeghi, "Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices," Scientific Reports 7, Article number: 3379 (2017).

    A. Haddadi, R. Chevallier, A. Dehzangi, and M. Razeghi, "Extended short–wavelength infrared nBn photodetectors based on type–II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier," Applied Physics Letters, Vol. 110, p. 101104, March 2017.

    A. Dehzangi, A. Haddadi, S. Adhikary, and M. Razeghi, "Impact of Scaling Base Thickness on the Performance of Heterojunction Phototransistors," Nanotechnology 28, 10LT01 (2017).

    A. Haddadi, A. Dehzangi, S. Adhikary, R. Chevallier, and M. Razeghi, "Background limited long wavelength infrared InAs/InAs1−xSbx/AlAs1−xSbx type-II superlattice-based photodetectors operating at 110K," APL Materials 5, 035502 (2016).

    A. Haddadi, S. Adhikary, A. Dehzangi, and M. Razeghi, "Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices," Applied Physics Letters, Vol. 109, p. 021107, July 2016.

    A. Haddadi, X.V. Suo, A. Adhikary, P. Dianat, R. Chevallier, A.M. Hoang, and M. Razeghi, "High-performance short-wavelength infrared photodetectors based on type-II InAs/InAsSb/AlAsSb superlattices," Applied Physics Letters, Vol. 107, p. 141105, October 2015.

    M. Razeghi, A. Haddadi, G. Chen, R. Chevallier, and A. M. Hoang, "InAs/InAsSb Type-II Superlattices for High-Performance Long-Wavelength Infrared Medical Thermography," ECS Transactions, Vol. 66(7), p. 109, 2015.

    Q. Lu, M. Razeghi, S. Slivken, N. Bandyopadhyay, Y. Bai, W. Zhou, M. Chen, D. Heydari, A. Haddadi, R. McClintock, M. I. Amanti, and C. Sirtori, "High power frequency comb based on mid-IR quantum cascade laser at λ~9μm," Applied Physics Letters, Vol. 106, p. 051105, February 2015.

    A. Haddadi, R. Chevallier, G. Chen, A. M. Hoang, and M. Razeghi, "Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices," Applied Physics Letters, Vol. 106, p. 011104, January 2015.

    G. Chen, A. Haddadi, A.M. Hoang, R. Chevallier, and M. Razeghi, "Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application," Optics Letters, Vol. 40, Issue 1, pp. 45-47, January 2015.

    A. Haddadi, G. Chen, R. Chevallier, A. M. Hoang, and M. Razeghi , "InAs/InAsSb type-II superlattices for high performance long wavelength infrared detection," Applied Physics Letters, Vol. 105, p. 121104, September 2014.

    E. Cicek, R. McClintock, A. Haddadi, W. A. Gaviria Rojas, and M. Razeghi, "High Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlGaN," IEEE Journal of Quantum Electronics (JQE), Vol. 50, No. 8, pp. 591-595, August 2014.

    M. Hoang, G. Chen, R. Chevallier, A. Haddadi, and M. Razeghi, "High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection," Applied Physics Letters, Vol. 104, p. 251105, June 2014.

    A.M. Razeghi, A. Haddadi, A. M. Hoang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, P. R. Bijjam, and R. McClintock , "Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems," Journal of Electronic Materials, pp.1-6, March 2014.

    G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, and M. Razeghi, "Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array," Applied Physics Letters, Vol. 104, p. 251105, June 2014.

    Chuanle Zhou, I. Vurgaftman, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, J. R. Meyer, A. Hoang, A. Haddadi, M. Razeghi, and M. Grayson, "Thermal conductivity tensors of the cladding and active layers of antimonide infrared lasers and detectors," Optical Materials Express, Vol. 3, Iss. 10, pp. 1632–1640, 2013.

    G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, P. R. Bijjam, B.-M. Nguyen, and M. Razeghi, "Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement," Applied Physics Letters, Vol. 103, p. 033512, July 2013.

    M. Razeghi, A. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, and R. McClintock, "Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices," Infrared Physics & Technology, Vol. 59, pp. 41–52, July 2013.

    A.M. Hoang, G. Chen, A. Haddadi, and M. Razeghi, "Demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices," Applied Physics Letters, Vol. 102, No. 1, p. 011108-1, January 2013.

    E.K. Huang, A. Haddadi, G. Chen, A.M. Hoang, and M. Razeghi, "Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors," Optics Letters, Vol. 38, no. 1, pp. 22-24, January 2013.

    E.K. Huang, M.A. Hoang, G. Chen, S.R. Darvish, A. Haddadi, and M. Razeghi, "Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices," Optics Letters, Vol. 37, No. 22, p. 4744-4746, November 2012.

    E.K. Huang, S. Abdollahi Pour, M.A. Hoang, A. Haddadi, M. Razeghi and M.Z. Tidrow, "Low irradiance background limited type-II superlattice MWIR M-barrier imager," OSA Optics Letters, Vol. 37, No. 11, pp. 2025-2027, June 2012.

    A.M. Hoang, G. Chen, A. Haddadi, S. Abdollahi Pour, and M. Razeghi, "Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices," Applied Physics Letters, Vol. 100, No. 21, p. 211101-1, May 2012.

    A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen, and M. Razeghi, "High Operability 1024×1024 Long Wavelength Type-II Superlattice Focal Plane Array," IEEE Journal of Quantum Electronics (JQE), Vol. 48, No. 2, pp. 221-228, February 2012.

    E.K. Huang, A. Haddadi, G. Chen, B.M. Nguyen, M.A. Hoang, R. McClintock, M. Stegall, and M. Razeghi, "Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance," OSA Optics Letters, Vol. 36, No. 13, pp. 2560-2562, July 2011.

    M. Razeghi, S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi, and B.M. Nguyen, "Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures," Opto-Electronics Review (OER), Vol. 19, No. 3, pp. 46-54, June 2011.

    S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi, B.M. Nguyen and M. Razeghi, "High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices," Applied Physics Letters, Vol. 98, No. 14, pp. 143501-1, April 2011.

    Y. Bai, S. Slivken, S.R. Darvish, A. Haddadi, B. Gokden and M. Razeghi, "High power broad area quantum cascade lasers," Applied Physics Letters, Vol. 95, No. 22, pp. 221104-1, November 2009.