Faculty Directory
Arash Dehzangi

Research Assistant Professor


2220 Campus Drive
Cook Hall
Evanston, IL 60208-3109

Email Arash Dehzangi


Arash Dehzangi's LinkedIn Page

Research at the Center for Quantum Devices


Electrical and Computer Engineering


Ph.D. Nanoelectronics & Nanoscience, University Putra Malaysia, Malaysia,

M.S. Solid State Physics, Shiraz University, Shiraz, Iran

B.S. Applied Physics, Shahid Chamran University of Ahvaz, Iran

Research Interests

Semiconductor and optoelectronic solid state devices, novel electronic and optoelectronic devices; nanoelectronics, spintronic, microengineering, scaling transistors (MOSFETs, BJTs); semiconductor processing and nano/micro fabrication, novel infrared detectors and imagers, condensed matter and solid state physics

Selected Publications

    Wu D, Dehzangi A, Zhang Y, Razeghi M. “Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition” Applied Physics Letters, 112(24), 241103. (2018).

    Dehzangi A, Haddadi A Chevallier R, Zhang Y, Razeghi M “nBn extended short–wavelength infrared focal plane array” Optics Letters, 43, (3), pp. 591-594 (2018)

    Zhang Y, Haddadi A Chevallier, Dehzangi A, R, Razeghi M, “Thin-film Antimony-based Photodetectors Integrated on Si” IEEE journal of quantum electronics, 54 (2), pp. 4000207-1-7 (2018),

    Haddadi A., Dehzangi A., Chevallier R., Yang T, Razeghi, M. “Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future”, In Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 1054004 (2018)

    Larki F., Dehzangi, A, Islam Ali, S. H. Abedini A, MAjlis B.Y,“  Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Studys” Silicon, Springer, 10.4 (2018): 1305-1314 

    Dehzangi A, Larki F. Mohd Razip Wee M.F, Wichmann N, Majlis  Burhanuddin Y, Bollaert S “Analog/RF study of self-aligned In0.53Ga0.47As MOSFET with scaled gate length”. Journal of Electronic Materials, 46.2 (2017): 782-789

    Chevallier R, Dehzangi A, Haddadi A Razeghi M “Type–II superlattice–based extended short–wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch–stop layer to allow near–visible light detection”, Optic Letters, OSA, 42(21), 4299-4302, (2017)

    Dehzangi A, Haddadi A. Adhikary S, Razeghi M. “Impact of Scaling Base Thickness on Performance of Heterojunction Phototransistor”. Nanotechnology 28.10 : 10LT01. (2017).

    Haddadi A. Chevallier R, Dehzangi A, Razeghi M “Extended short–wavelength infrared nBn photodetectors based on type–II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier” Applied Physics Letters.110 (10) (2017).

    Haddadi A. Dehzangi A, Adhikary S, Chevallier R, Razeghi M “Bias-selectable nBn dual-band long-wavelength infrared photodetectors based on InAs/InAs1-xSbx/AlAs1-xSbx TII superlattices” Scientific Report. Scientific Reports 7, Article number: 3379 (2017)

    Haddadi A. Dehzangi A, Adhikary S, Chevallier R, Razeghi M “Background-limited long wavelength infrared InAs/InAs1-xSbx type-II superlattice-based photodetectors operating at 110K”. APL Materials 5.3: 035502 (2017).

    Dehzangi A, Ghaffari AR, Kakooei S, Ghasemi M, Saadati F, Soleimani H. Investigation Of Charged Particles Radiation Moving In A Homogeneous Dispersive Medium’ International Journal of Engineering-Transactions B: Applications. 10;30(5):678. (2017)

    Zhang Y, Li H,  Li P, Dehzangi A,  Wang L, Yi X, Wang G, "Optically-pumped Single-mode Deep-ultraviolet Microdisk Lasers with AlGaN-based Multiple Quantum Wells on Si Substrate," IEEE Photonics Journal, J. 9.5 (2017): 2400508.

    Haddadi A. Adhikary S, Dehzangi A, Razeghi M,” Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices” 2016, Applied Physics Letters, Vol: 109 (2) 021107.

    Dehzangi A, Larki F, Hutagalung, S.D, Majlis B. Y, et.al " Study of the side gate junctionless transistor in accumulation region",  2016, Microelectronics International, Vol. 33 ( 2), pp.61 – 67

    Hoang, A. M. Dehzangi A, Sourav Adhikary, Manijeh Razeghi. “High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices”. Scientific Report. 6, 24144; (2016),

    Naseri M, Dehzangi A, Kamari H, See A, Abedi M, Salasi R, et al. Structure and Physical Properties of NiO/Co3O4 Nanoparticles. Metals. 2016; 6(8):181.

    Dehzangi A, Larki F, Naseri MG, Navasery M, Majlis BY, et al. “Fabrication and simulation of single crystal p-type Si nanowire using SOI technology”, 2016, Applied Surface Science, Vol 334, P:87–93,

    Dehzangi A, Larki F, Hutagalung, S.D, Majlis B. Y, Navasery M, Nasery M.G, Abdul Hamid N, Mohd Noor M,"Impact of parameter variation in fabrication of nanostructure by Atomic Force Microscopy nanolithography", 2013, PloS one, 8(6), e65409,

    Dehzangi A, Larki F, Hutagalung, S.D, Majlis B. Y, Navasery M, Nasery M.G, Abdul Hamid N, Mohd Noor M, "Impact of KOH etching on nanostructure fabricated by Local anodic oxidation method",   Int Journal of Electrochem Science ,  Vol. 8 (5), 2013, 8084-8096,

    Soltani N, Dehzangi A, Kharazmi A, Saion E, Yunus W M M, Majlis B Y, Zare M. R, Gharibshahi E, Khalilzadeh N “Structural, optical and electrical properties of ZnS nanoparticles affecting by organic coating” 2014, Chalcogenide Letters 11 79-90,

    Naseri MG, Halimah MK, Dehzangi A, Kamalfar A, Saion E, B. Y. Majlis “A comprehensive overview on the structure and comparison of magnetic properties of nanocrystalline synthesized by a thermal treatment method” (2014). Journal of Phys and Chem of Solids 75: 315-327, 

    Dehzangi A , Mohd Razip Wee M.F, Wichmann N, Bollaert S,  Majlis  Burhanuddin Y. “ Threshold voltage study of scaled self-aligned In0.53Ga0.47As MOSFET for different source/drain doping concentrations”,  Micro& Nano Letters,2014, Vol9,(2)

    Larki F, Dehzangi A, Ali, S. H. M., Jalar, A., Islam, et.al “Effect of geometric parameters on the performance of p-type junctionless lateral gate transistors” PLoS ONE, 2014. 9(4): p. e95182, 

    Dehzangi A, F. Larki, S. D. Hutagalung, E. B. Saion, A. M. Abdullah, M. N. Hamidon, B. Y. Majlis, S. Kakooei. “Numerical investigation and comparison with experimental characterization of side gate p-type Junctionless Si transistor in pinchoff state”, Micro& Nano Letters, 2012, 7(9), pp 981-985

    Larki F, Dehzang A, Abedini A, Makarimi AA, Saion E, Hutagalung S. D, Hamidon M. N , “ Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope”, Solid Status Solidi (a), Vol.210, 1-6,2013, 

    Dehzangi A, Mohd Razip Wee M.F, Wichmann N, Bollaert S,  Majlis  Burhanuddin Y, “ Gate length variation effect on performance of gate-first self-aligned In0.53Ga0.47As MOSFET”,  PloS one, 2013, 8(12): e82731,

    Mohd Wee, Dehzangi A, Wichmann N, Bollaert S,  Majlis  Burhanuddin Y, “Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for MOSFET devices”,  Micro& Nano Letters,2013, pp 1-5,

    Larki F, Dehzang A, Abedini A, Makarimi AA, Saion E, Hutagalung S. D, Hamidon N, Hassan J “Pinch-off mechanism in double lateral gate junctionless transistors fabricated by scanning probe microscope based lithography “, Beilstein J. Nanotechnol, vol. 3, pp. 817–823, 2012,

    Dehzangi A, Abdullah A.M , Larki F, Hutagalung S.D, Saion E.B, et.al“Electrical property comparison and charge transmission in p-type Double gate and Single gate Junctionless Accumulation Transistor fabricated by AFM nanolithography”, Nanoscale Research Letters 2012, 7(1): p. 381. 2012