Two Papers by Center for Quantum Devices Investigators Selected for IEEE Journal of Quantum Electronics Cover Stories

Northwestern Engineering's Manijeh Razeghi and Steven Slivken provided the proof-of-concept for the realization of the world's first InP-based long wavelength quantum cascade laser grown on top of a silicon substrate in a recent paper, titled "High Power, Room Temperature InP-Based Quantum Cascade Laser Grown on Si" in the December 2022 IEEE Journal of Quantum Electronics, Volume 58, Number 6. The paper was featured on the issue cover.

Razeghi is the Walter P. Murphy Professor of Electrical and Computer Engineering and director, Center for Quantum Devices. Slivken is a research professor of electrical and computer engineering at the Center for Quantum Devices.

Razeghi and Slivken demonstrated simultaneous room temperature operation and high-power output power, which is a first for this type of laser. The layer sequence and contact geometry exhibit relatively low series resistance and optical losses, through some optimization can still be done at this time.

In addition, another paper by Razeghi, Slivken, research associates Rajendra Kumar Saroj, Van Hoang Nguyen; and Gail Brown, adjunct professor of electrical and computer engineering at the Center for Quantum Devices, was highlighted as the cover story of the October 2022 IEEE Journal of Quantum Electronics, Volume 58, Number 5.

The paper, titled "Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE," demonstrated the world's first planar long-wavelength infrared photodetector based on type-II superlattices.