Pedram Khalili is Invited Speaker at 2nd IEEE Conference on Advances in Magnetics

Prof. Pedram Khalili delivered an Invited Talk at the 2nd IEEE Conference on Advances in Magnetics (IEEE AIM 2018), held in La Thuile, Italy on February 4 - 7, 2018.

Prof. Khalili presented his paper, titled, “Pushing the Limits of Energy Efficiency and Scaling in Spintronics: Voltage-control, Spin-orbit Torques, and Microwave Dynamics in Magnetic Tunnel Junctions.”

Prof. Khalili is the Director of The PERLab, which develops the computing systems of the future, starting from the fundamentals. Thus, creating nano-scale devices and materials, and studying how to use them in electronic systems with unprecedented performance and energy efficiency.

His research interests, include: Nanoelectronics, nano-magnetism and spintronics, nonvolatile memory and logic, magnetic tunnel junctions, spin waves, microwave magnetic devices, circuits and computing architectures enabled by emerging nano-devices.

IEEE AIM 2018 was the second edition of the conference Advances in Magnetics, organised by IEEE Italy Section and its chapters (EMC, IM and MAG). It represents a forum for presentation and discussion of the most recent advancements in all the fields of Magnetics: theory, numerical modeling, experiments and applications. The event is open to experts and scientists with different backgrounds (engineers, physicists, mathematicians, material scientists, chemists, biologists, etc.) to present, discuss exchange ideas, methods and results.

Talk Abstract: We will review recent progress and perspectives on future directions of spintronics focusing on two areas: (i) How to build spintronic memory devices with unprecedented energy efficiency, speed, and integration density, with an eye on applications in brain-inspired computing, (ii) How emerging device concepts in spintronics, which frequently emerge from a desire to build better memory elements, can be adapted to other types of devices that are important for IoT, with examples being spintronic oscillators, microwave detectors, and random number generators. We will discuss progress in the development of magnetic tunnel junctions controlled by electric fields, which exhibit the lowest power consumption MRAM cells developed to date (< 5 fJ/bit with write times < 1 ns), and discuss some of the current device and circuit-level opportunities and challenges for these devices [1, 2]. We then discuss random number generators using voltage- and spin-orbit-torquecontrolled magnetic tunnel junctions, and some of their potential application areas [3, 4]. Finally, we point out recent results and opportunities in the development of high-performance microwave devices [5], based on engineering of interfacial anisotropy and spin-orbit interaction in
nanostructures.