Faculty Directory
Manijeh Razeghi

Walter P. Murphy Professor of Electrical Engineering and Computer Science


2220 Campus Drive
Cook Hall 4051
Evanston, IL 60208-3109

847-491-7251Email Manijeh Razeghi


Center for Quantum Devices


Electrical Engineering and Computer Science


Docteur d'État ès Sciences Physiques, Université de Paris, Paris, France

Docteur 3ème Cycle Solid State Physics, Université de Paris, Paris, France

DEA Science des Matériaux, Université de Paris, Paris, France

Research Interests

Since its founding in 1992, the Center for Quantum Devices at Northwestern University has evolved from only a mere vision into a concrete world-class research laboratory, with the mission to pursue academic excellence and high-level research in compound semiconductor science and nanotechnology.

Advancing the frontiers in this cutting-edge scientific field is an exciting and challenging adventure, for which the Center has assembled a strong team of graduate and undergraduate students, research scientists and professors with diverse backgrounds, working within the Center's unique state-of-the-art research facility. The creativity and ingenuity of this strong team has proved successful in solving the many scientific issues encountered on a daily basis, achieving a number of breakthroughs and staying ahead of competition. At the same time, as an integral part of a high-level educational institution, the Center has been educating and training future leaders for both academia and industry.

The scientific research has involved developing an understanding of the physics of new semiconductor crystals for novel applications and realizing advanced semiconductor devices such as lasers, photodetectors, transistors, waveguides and switches. This entails a multidisciplinary combination of solid state physics, quantum mechanics, electrical, mechanical and chemical engineering and materials science, as well as a strong collaborative effort between Academia, Industry, and National Laboratories. A strong testimony of the success of this endeavor has been the consistent support of several industrial corporations and government agencies from the Department of Defense to push forward the science and nanotechnology of compound semiconductor optoelectronic and quantum devices at the Center.

The research activity involves a wide range of challenging scientific topics, including Ultraviolet and visible devices based on III-Nitride semiconductors, aluminum-free InGaAsP/GaAs lasers emitting at 980 nm and 808 nm, antimony based high power 3-5 μm lasers, uncooled infrared (3-16 μm) quantum cascade lasers, quantum well infrared photodetectors (QWIP), Type-II superlattice based infrared detectors, the development of uncooled InAsSb photodetector technology, InTlAsBiSb detector technology, self assembled quantum dot devices, and nanotechnology using electron-beam lithography. In all these fields, the Center's research work has been the world's first or best, and has resulted in 628 publications, 18 books and 30 book chapters, 732 conference presentations, lectures, plenary and invited talks, and organization of international conferences. In addition, 57 patents have been awarded or are currently pending, and 112 prestigious recognition awards have been bestowed upon Center members.

Selected Publications

  • Razeghi, Manijeh; Bayram, Can; Ott, John A.; Shiu, Kuen-Ting; Cheng, Cheng-Wei, “Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy”, Advanced Functional Materials, (2014)
  • Razeghi, Manijeh; Stefaski, Przemysaw; Lewicki, Rafa; Sanchez, Nancy P.; Tarka, Jan, “Measurements of carbon monoxide mixing ratios in Houston using a compact high-power CW DFB-QCL-based QEPAS sensor”, Applied Physics B, (2014)
  • Razeghi, M.; Slivken, S.; Lu, Q.Y.; Bandyopadhyay, N.; Bai, Y., “Continuous operation of a monolithic semiconductor terahertz source at room temperature”, Applied Physics Letters, (2014)
  • Chen, G.; Razeghi, M.; Hoang, A.M., “Evaluating the size-dependent quantum efficiency loss in a SiO 2 -Y 2 O 3 hybrid gated type-II InAs/GaSb long-infrared photodetector array”, Applied Physics Letters, (2014)
  • Razeghi, M.; Hoang, A.M.; Callewaert, F., “Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice”, Applied Physics Letters, (2014)
  • Hoang, A.M.; Chen, G.; Chevallier, R.; Haddadi, A.; Razeghi, M., “High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection”, Applied Physics Letters, (2014)
  • Razeghi, Manijeh; Cicek, Erdem; McClintock, Ryan; Haddadi, Abbas; Rojas, William A. Gaviria, “High performance solar-blind ultraviolet 320  256 focal plane arrays based on Al x Ga 1-x N”, IEEE Journal of Quantum Electronics, (2014)
  • Chen, G.; Razeghi, M.; Darvish, S.R.; Haddadi, A.; Hoang, A.M., “Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems”, Journal of Electronic Materials, (2014)