Faculty Directory
Pedram Khalili

Associate Professor of Electrical Engineering and Computer Science

Contact

Tech M393
2145 Sheridan Road
Evanston, IL 60208-3109

847-467-1035Email Pedram Khalili

Website

Pedram Khalili's Homepage

PERLab (Physical Electronics Research Laboratory)


Departments

Electrical Engineering and Computer Science

Education

Ph.D. Electrical Engineering, Delft University of Technology (TU Delft), Delft, Netherlands

B.Sc. Electrical Engineering, Sharif University of Technology, Tehran, Iran


Biography

Pedram Khalili-Amiri (LinkedinScholar) works on developing the computing systems of the future, starting from novel nano-scale devices/materials that enable systems with unprecedented performance and energy efficiency. Much of his work involves devices that use both the spin and charge of electrons, also referred to as spintronics. Previously Pedram was an adjunct assistant professor in the department of electrical and computer engineering at UCLA from 2013-2017, where he co-led the memory program within the NSF TANMS center, focusing on development of electric-field-controlled magnetic memory with unprecedented energy efficiency. During 2009-2014, at UCLA he was project manager of two DARPA multi-institution programs, focusing on the development of spin-transfer-torque magnetic random access memory (STT-MRAM) and non-volatile logic (NVL), working with several major industry and university partners. These programs resulted in the world’s fastest and lowest-power magnetic memory technologies at the time. In addition, since 2012 he has been co-founder and chief technology officer of Inston Inc., a startup company pioneering voltage-controlled MRAM for high-performance computing applications. His professional activities have included serving as a guest editor for Spin, and serving on the technical program committee of the Joint MMM/Intermag Conference.

Research Interests

Nanoelectronics, nano-magnetism and spintronics, nonvolatile memory and logic, magnetic tunnel junctions, spin waves, microwave magnetic devices, circuits and computing architectures enabled by emerging nano-devices.


Selected Publications

    G. Yu, P. Upadhyaya, Q. Shao, H. Wu, G. Yin, X. Li, C. He, W. Jiang, X. Han, P. Khalili Amiri, K.L. Wang, "Room-Temperature Skyrmion Shift Device for Memory Application", Nano Letters, Vol. 17, pp. 261–268, 2017.

    C. Grezes, H. Lee, A. Lee, S. Wang, F. Ebrahimi, X. Li, K. Wong, J.A. Katine, B. Ocker, J. Langer, P. Gupta, P. Khalili Amiri, K.L. Wang, “Write Error Rate and Read Disturbance in Electric-Field-Controlled Magnetic Random-Access Memory”, IEEE Magnetics Letters, Vol. 8, p. 3102705, 2017.

    B. Fang, M. Carpentieri, X. Hao, H. Jiang, J.A. Katine, I.N. Krivorotov, B. Ocker, J. Langer, K.L. Wang, B. Zhang, B. Azzerboni, P. Khalili Amiri, G. Finocchio, Z. Zeng, “Giant spin-torque diode sensitivity in the absence of bias magnetic field”, Nature Communications, Vol. 7. pp.11259/1-7, 2016.

    C. Grezes, F. Ebrahimi, J.G. Alzate, X. Cai, J. A. Katine, J. Langer, B. Ocker, P. Khalili Amiri, K.L. Wang, "Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product", Applied Physics Letters, Vol. 108, No. 1, p. 012403, 2016.

    M. Montazeri, P. Upadhyaya, M.C. Onbasli, G. Yu, K.L. Wong, M. Lang, Y. Fan, X. Li, P. Khalili Amiri, R.N. Schwartz, C.A. Ross, K.L. Wang, "Magneto-optical investigation of spin–orbit torques in metallic and insulating magnetic heterostructures", Nature Communications, Vol. 6, p. 8958, 2015.

    P. Khalili, K.L. Wang, "The computer chip that never forgets", IEEE Spectrum, Vol. 52, No. 7, pp. 30-56, 2015.

    G. Yu, P. Upadhyaya, Y. Fan, J.G. Alzate, W. Jiang, K.L. Wong, S. Takei, S.A. Bender, L.T. Chang, Y. Jiang, M. Lang, J. Tang, Y. Wang, Y. Tserkovnyak, P. Khalili Amiri, K.L. Wang, "Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields", Nature Nanotechnology, Vol. 9, No. 7, pp. 548–554, 2014.

    R. Dorrance, J.G. Alzate, S.S. Cherepov, P. Upadhyaya, I.N. Krivorotov, J.A. Katine, J. Langer, K.L. Wang, P. Khalili Amiri, D. Markovic, "Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM", IEEE Electron Device Letters, Vol. 34, No. 6, pp. 753-755, 2013.